PART |
Description |
Maker |
ADP5024 |
Dual 3 MHz, 1200 mA Buck Regulators with One 300 mA LDO
|
Analog Devices
|
1214-55 |
55 W, 28 V, 1200-1400 MHz common base transistor 55 Watts - 28 Volts, Pulsed Radar 1200 - 1400 MHz BJT
|
GHZTECH[GHz Technology]
|
0500DP44A1215 |
1200 /1200 MHz Diplexer (BPF/BRF)
|
Johanson Technology Inc.
|
ADP5023 MDT2520-CN EPL2014-102ML ADP5023ACPZ-R7 LQ |
Dual 3 MHz, 800 mA Buck
|
Analog Devices
|
1214-370V |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 370; P(in) (W): 50; Gain (dB): 8.7; Vcc (V): 50; Pulse Width (µsec): 330; Duty Cycle (%): 10; Case Style: 55ST-1 RF POWER TRANSISTOR 370 Watts - 50 Volts, 330 μs, 10% Radar 1200 - 1400 MHz
|
STMicroelectronics N.V. Microsemi Corporation
|
ADC-20-12 |
Directional Coupler 50楼? 100 to 1200 MHz Directional Coupler 50惟 100 to 1200 MHz Directional Coupler 50Ω 100 to 1200 MHz
|
Mini-Circuits
|
1214-300M |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 300; P(in) (W): 40; Gain (dB): 8.75; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR 300 Watts - 40 Volts, 150ms, 10% Radar 1200 - 1400 MHz
|
Microsemi, Corp. Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
TCD-20-4-75 |
Directional Coupler 75惟 40 to 1200 MHz Directional Coupler 75Ω 40 to 1200 MHz
|
Mini-Circuits
|
LTC3556 LTC3556EUFD-PBF LTC3556EUFD-TRPBF LTC3556E |
High Efciency USB Power Manager with Dual Buck and Buck-Boost DC/DCs; Package: QFN; No of Pins: 28; Temperature Range: -40°C to 125°C 3 A BATTERY CHARGE CONTROLLER, 2700 kHz SWITCHING FREQ-MAX, PQCC28 High Effi ciency USB Power Manager with Dual Buck and Buck-Boost DC/DCs
|
Linear Technology, Corp. http://
|
QCC-20 |
Surface Mount Power Splitter/Combiner 2 Way-90° 50 1200 to 2200 MHz From old datasheet system Surface Mount Power Splitter/Combiner 2 Way-90∑ 50з 1200 to 2200 MHz Surface Mount Power Splitter/Combiner 2 Way-9050з 1200 to 2200 MHz
|
MINI[Mini-Circuits] MINI [Mini-Circuits]
|
CM100DU-24F CM100DU-24H |
Trench Gate Design Dual IGBTMOD?/a> 100 Amperes/1200 Volts HIGH POWER SWITCHING USE INSULATED TYPE Trench Gate Design Dual IGBTMOD⑩ 100 Amperes/1200 Volts Trench Gate Design Dual IGBTMOD 100 Amperes/1200 Volts
|
Mitsubishi Electric Semiconductor Powerex Power Semiconductors
|